MJ4502
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ4502
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 90
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 30
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ4502
MJ4502
Datasheet (PDF)
..1. Size:128K onsemi
mj4502.pdf
MJ4502High-Power PNP SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the NPN MJ802PNP SILICON Pb-Free Package is Available*100 V
..3. Size:206K inchange semiconductor
mj4502.pdf
isc Silicon PNP Power Transistor MJ4502DESCRIPTIONHigh DC Current Gain-: h = 25-100@I = -7.5AFE CExcellent Safe Operating AreaComplement to the NPN MJ802Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers to 100-Watts music power per channel.ABSOLUTE M
0.1. Size:119K motorola
mj4502re.pdf
Order this documentMOTOROLAby MJ4502/DSEMICONDUCTOR TECHNICAL DATAMJ4502High-Power PNP Silicon30 AMPERETransistorPOWER TRANSISTORPNP SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Compleme
0.2. Size:124K onsemi
mj4502g.pdf
MJ4502High-Power PNP SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the NPN MJ802PNP SILICON Pb-Free Package is Available*100 V
9.1. Size:196K inchange semiconductor
mj450.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ450 DESCRIPTION Low Saturation Voltage- : VCE(sat) =-1V@IC=-10Adc DC Current Gain- : hFE=20(Min)@ IC=-10A APPLICATIONSDesigned for high-current switching and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base
Otros transistores... 2N3200
, 2N3201
, 2N3202
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, 2N3206
, 2N3207
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, 2N3209AQF
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, 2N3209DCSM
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.