All Transistors. MJ4502 Datasheet

 

MJ4502 Datasheet and Replacement


   Type Designator: MJ4502
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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MJ4502 Datasheet (PDF)

 ..1. Size:128K  onsemi
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MJ4502

MJ4502High-Power PNP SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the NPN MJ802PNP SILICON Pb-Free Package is Available*100 V

 ..2. Size:101K  mospec
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MJ4502

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 ..3. Size:206K  inchange semiconductor
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MJ4502

isc Silicon PNP Power Transistor MJ4502DESCRIPTIONHigh DC Current Gain-: h = 25-100@I = -7.5AFE CExcellent Safe Operating AreaComplement to the NPN MJ802Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers to 100-Watts music power per channel.ABSOLUTE M

 0.1. Size:119K  motorola
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MJ4502

Order this documentMOTOROLAby MJ4502/DSEMICONDUCTOR TECHNICAL DATAMJ4502High-Power PNP Silicon30 AMPERETransistorPOWER TRANSISTORPNP SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Compleme

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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