MJ8504 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ8504
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175 W
Tensión colector-base (Vcb): 1200 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 450 pF
Ganancia de corriente contínua (hfe): 7.5
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MJ8504
MJ8504 Datasheet (PDF)
mj8504.pdf

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj8501.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
mj8500.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
mj8505.pdf

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
Otros transistores... MJ802 , MJ8100 , MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , D880 , MJ8505 , MJ900 , MJ9000 , MJ901 , MJ920 , MJ921 , MJD112 , MJD112-1 .
History: 2N78 | H933 | ST2SB596 | SFT351 | LLB23 | SCE309
History: 2N78 | H933 | ST2SB596 | SFT351 | LLB23 | SCE309



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