All Transistors. MJ8504 Datasheet

 

MJ8504 Datasheet and Replacement


   Type Designator: MJ8504
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 450 pF
   Forward Current Transfer Ratio (hFE), MIN: 7.5
   Noise Figure, dB: -
   Package: TO3
 

 MJ8504 Substitution

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MJ8504 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
 mj8504.pdf pdf_icon

MJ8504

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 9.1. Size:170K  inchange semiconductor
 mj8501.pdf pdf_icon

MJ8504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.2. Size:170K  inchange semiconductor
 mj8500.pdf pdf_icon

MJ8504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:207K  inchange semiconductor
 mj8505.pdf pdf_icon

MJ8504

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

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Datasheet: MJ802 , MJ8100 , MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , D880 , MJ8505 , MJ900 , MJ9000 , MJ901 , MJ920 , MJ921 , MJD112 , MJD112-1 .

History: MP4053

Keywords - MJ8504 transistor datasheet

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