MJ8504 Specs and Replacement

Type Designator: MJ8504

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 450 pF

Forward Current Transfer Ratio (hFE), MIN: 7.5

Noise Figure, dB: -

Package: TO3

 MJ8504 Substitution

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MJ8504 datasheet

 ..1. Size:207K  inchange semiconductor

 mj8504.pdf pdf_icon

MJ8504

isc Silicon NPN Power Transistor MJ8504 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒

 9.1. Size:170K  inchange semiconductor

 mj8501.pdf pdf_icon

MJ8504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat... See More ⇒

 9.2. Size:170K  inchange semiconductor

 mj8500.pdf pdf_icon

MJ8504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat... See More ⇒

 9.3. Size:207K  inchange semiconductor

 mj8505.pdf pdf_icon

MJ8504

isc Silicon NPN Power Transistor MJ8505 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒

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Detailed specifications: MJ802, MJ8100, MJ8101, MJ8400, MJ8500, MJ8501, MJ8502, MJ8503, 2N4401, MJ8505, MJ900, MJ9000, MJ901, MJ920, MJ921, MJD112, MJD112-1

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