isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8503 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8502 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat