MJD148 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJD148NPN Silicon PowerTransistorDPAK for Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain4.0 AMPERES Low Saturation Voltage45 VOLTS, 20 WATTS High Current Gain - Bandwidth ProductCOLLECTOR Epoxy Meets UL 94 V-0 @ 0.125 in2, 4 NJV Prefix for Autom

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252)Plastic PackageDesigned for General Purpose Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 45 VVCBOCollector Base Voltage 45 VEmitter Base Volta

isc Silicon NPN Power Transistor MJD148DESCRIPTIONDC Current Gain-: h = 85(Min) @ I = 0.5AFE CLow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 2ACE(sat) CDPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and low speedswitching appli

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @