MJD148 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJD148
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de transistor bipolar MJD148

MJD148 Datasheet (PDF)

..1. Size:85K onsemi
mjd148.pdf

MJD148NPN Silicon PowerTransistorDPAK for Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain4.0 AMPERES Low Saturation Voltage45 VOLTS, 20 WATTS High Current Gain - Bandwidth ProductCOLLECTOR Epoxy Meets UL 94 V-0 @ 0.125 in2, 4 NJV Prefix for Autom

..2. Size:591K cdil
mjd148.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252)Plastic PackageDesigned for General Purpose Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 45 VVCBOCollector Base Voltage 45 VEmitter Base Volta

..3. Size:205K inchange semiconductor
mjd148.pdf

isc Silicon NPN Power Transistor MJD148DESCRIPTIONDC Current Gain-: h = 85(Min) @ I = 0.5AFE CLow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 2ACE(sat) CDPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and low speedswitching appli

0.1. Size:148K onsemi
njvmjd148.pdf

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

0.2. Size:148K onsemi
mjd148t4g.pdf