MJD148 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD148

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 85

Encapsulados: TO251

 Búsqueda de reemplazo de MJD148

- Selecciónⓘ de transistores por parámetros

 

MJD148 datasheet

 ..1. Size:85K  onsemi
 mjd148.pdf pdf_icon

MJD148

MJD148 NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features POWER TRANSISTOR High Gain 4.0 AMPERES Low Saturation Voltage 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product COLLECTOR Epoxy Meets UL 94 V-0 @ 0.125 in 2, 4 NJV Prefix for Autom

 ..2. Size:591K  cdil
 mjd148.pdf pdf_icon

MJD148

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 45 V VCBO Collector Base Voltage 45 V Emitter Base Volta

 ..3. Size:205K  inchange semiconductor
 mjd148.pdf pdf_icon

MJD148

isc Silicon NPN Power Transistor MJD148 DESCRIPTION DC Current Gain- h = 85(Min) @ I = 0.5A FE C Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 2A CE(sat) C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low speed switching appli

 0.1. Size:148K  onsemi
 njvmjd148.pdf pdf_icon

MJD148

MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

MOSTRAR MÁS

Otros transistores... MJD117T4, MJD122, MJD122-1, MJD122T4, MJD127, MJD127-1, MJD127T4, MJD13003, S9018, MJD200, MJD200-1, MJD210, MJD210-1, MJD210T4, MJD243, MJD243-1, MJD243T4