MJD148 Specs and Replacement

Type Designator: MJD148

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO251

 MJD148 Substitution

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MJD148 datasheet

 ..1. Size:85K  onsemi

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MJD148

MJD148 NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features POWER TRANSISTOR High Gain 4.0 AMPERES Low Saturation Voltage 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product COLLECTOR Epoxy Meets UL 94 V-0 @ 0.125 in 2, 4 NJV Prefix for Autom... See More ⇒

 ..2. Size:591K  cdil

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MJD148

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 45 V VCBO Collector Base Voltage 45 V Emitter Base Volta... See More ⇒

 ..3. Size:205K  inchange semiconductor

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MJD148

isc Silicon NPN Power Transistor MJD148 DESCRIPTION DC Current Gain- h = 85(Min) @ I = 0.5A FE C Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 2A CE(sat) C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low speed switching appli... See More ⇒

 0.1. Size:148K  onsemi

 njvmjd148.pdf pdf_icon

MJD148

MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @... See More ⇒

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Detailed specifications: MJD117T4, MJD122, MJD122-1, MJD122T4, MJD127, MJD127-1, MJD127T4, MJD13003, S9018, MJD200, MJD200-1, MJD210, MJD210-1, MJD210T4, MJD243, MJD243-1, MJD243T4

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