MJD243 Todos los transistores

 

MJD243 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD243
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de MJD243

   - Selección ⓘ de transistores por parámetros

 

MJD243 Datasheet (PDF)

 ..1. Size:107K  onsemi
 mjd243 mjd253.pdf pdf_icon

MJD243

MJD243 (NPN),MJD253 (PNP)Complementary SiliconPlastic Power TransistorsDPAK-3 for Surface Mount Applicationswww.onsemi.comDesigned for low voltage, low-power, high-gain audio amplifierapplications.4.0 A, 100 V, 12.5 WFeaturesPOWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY(No Suffix)COLLECTOR COLL

 ..2. Size:242K  inchange semiconductor
 mjd243.pdf pdf_icon

MJD243

isc Silicon NPN Power Transistor MJD243DESCRIPTIONDC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJD253Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low power audio amplifier and low-current,high-speed switching

 0.1. Size:209K  motorola
 mjd243re.pdf pdf_icon

MJD243

Order this documentMOTOROLAby MJD243/DSEMICONDUCTOR TECHNICAL DATAPlastic Power Transistor MJD243*DPAK For Surface Mount Applications*Motorola Preferred Device. . . designed for low voltage, lowpower, highgain audio amplifier applications.NPN SILICON CollectorEmitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdcPOWER TRANSISTOR High DC Curr

 0.2. Size:200K  onsemi
 mjd243g.pdf pdf_icon

MJD243

MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu

MOSTRAR MÁS

Otros transistores... MJD127T4 , MJD13003 , MJD148 , MJD200 , MJD200-1 , MJD210 , MJD210-1 , MJD210T4 , 2SD882 , MJD243-1 , MJD243T4 , MJD2955 , MJD2955-1 , MJD2955T4 , MJD3055 , MJD3055-1 , MJD3055T4 .

History: FMB3904 | BUP22 | SRA2219 | 2SC1393 | BUP22C | BF125

 

 
Back to Top

 


 
.