MJD243 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD243

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO251

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MJD243 datasheet

 ..1. Size:107K  onsemi
 mjd243 mjd253.pdf pdf_icon

MJD243

MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK-3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLL

 ..2. Size:242K  inchange semiconductor
 mjd243.pdf pdf_icon

MJD243

isc Silicon NPN Power Transistor MJD243 DESCRIPTION DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJD253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low-current, high-speed switching

 0.1. Size:209K  motorola
 mjd243re.pdf pdf_icon

MJD243

Order this document MOTOROLA by MJD243/D SEMICONDUCTOR TECHNICAL DATA Plastic Power Transistor MJD243* DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low power, high gain audio amplifier applications. NPN SILICON Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc POWER TRANSISTOR High DC Curr

 0.2. Size:200K  onsemi
 mjd243g.pdf pdf_icon

MJD243

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

MOSTRAR MÁS

Otros transistores... MJD127T4, MJD13003, MJD148, MJD200, MJD200-1, MJD210, MJD210-1, MJD210T4, B647, MJD243-1, MJD243T4, MJD2955, MJD2955-1, MJD2955T4, MJD3055, MJD3055-1, MJD3055T4