All Transistors. MJD243 Datasheet

 

MJD243 Datasheet and Replacement


   Type Designator: MJD243
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO251
      - BJT Cross-Reference Search

   

MJD243 Datasheet (PDF)

 ..1. Size:107K  onsemi
 mjd243 mjd253.pdf pdf_icon

MJD243

MJD243 (NPN),MJD253 (PNP)Complementary SiliconPlastic Power TransistorsDPAK-3 for Surface Mount Applicationswww.onsemi.comDesigned for low voltage, low-power, high-gain audio amplifierapplications.4.0 A, 100 V, 12.5 WFeaturesPOWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY(No Suffix)COLLECTOR COLL

 ..2. Size:242K  inchange semiconductor
 mjd243.pdf pdf_icon

MJD243

isc Silicon NPN Power Transistor MJD243DESCRIPTIONDC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJD253Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low power audio amplifier and low-current,high-speed switching

 0.1. Size:209K  motorola
 mjd243re.pdf pdf_icon

MJD243

Order this documentMOTOROLAby MJD243/DSEMICONDUCTOR TECHNICAL DATAPlastic Power Transistor MJD243*DPAK For Surface Mount Applications*Motorola Preferred Device. . . designed for low voltage, lowpower, highgain audio amplifier applications.NPN SILICON CollectorEmitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdcPOWER TRANSISTOR High DC Curr

 0.2. Size:200K  onsemi
 mjd243g.pdf pdf_icon

MJD243

MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu

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History: KT368VM | 2G415 | 2N2799 | JC501Q | DMC96401 | BSY62B | BC808A

Keywords - MJD243 transistor datasheet

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