MJD243 PDF and Equivalents Search

 

MJD243 Specs and Replacement

Type Designator: MJD243

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO251

 MJD243 Substitution

- BJT ⓘ Cross-Reference Search

 

MJD243 datasheet

 ..1. Size:107K  onsemi

mjd243 mjd253.pdf pdf_icon

MJD243

MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK-3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLL... See More ⇒

 ..2. Size:242K  inchange semiconductor

mjd243.pdf pdf_icon

MJD243

isc Silicon NPN Power Transistor MJD243 DESCRIPTION DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJD253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low-current, high-speed switching ... See More ⇒

 0.1. Size:209K  motorola

mjd243re.pdf pdf_icon

MJD243

Order this document MOTOROLA by MJD243/D SEMICONDUCTOR TECHNICAL DATA Plastic Power Transistor MJD243* DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low power, high gain audio amplifier applications. NPN SILICON Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc POWER TRANSISTOR High DC Curr... See More ⇒

 0.2. Size:200K  onsemi

mjd243g.pdf pdf_icon

MJD243

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu... See More ⇒

Detailed specifications: MJD127T4 , MJD13003 , MJD148 , MJD200 , MJD200-1 , MJD210 , MJD210-1 , MJD210T4 , B647 , MJD243-1 , MJD243T4 , MJD2955 , MJD2955-1 , MJD2955T4 , MJD3055 , MJD3055-1 , MJD3055T4 .

Keywords - MJD243 pdf specs

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