MJE1290 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE1290

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO126

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MJE1290 datasheet

 9.1. Size:118K  inchange semiconductor
 mje12007.pdf pdf_icon

MJE1290

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE12007 DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 B

Otros transistores... MJE1091, MJE1092, MJE1093, MJE1100, MJE1101, MJE1102, MJE1103, MJE12007, A1013, MJE1291, MJE13002, MJE13003, MJE13004, MJE13005, MJE13006, MJE13007, MJE13007A