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MJE1290 Specs and Replacement


   Type Designator: MJE1290
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO126
 

 MJE1290 Substitution

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MJE1290 detailed specifications

 9.1. Size:118K  inchange semiconductor
 mje12007.pdf pdf_icon

MJE1290

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE12007 DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 B... See More ⇒

Detailed specifications: MJE1091 , MJE1092 , MJE1093 , MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , A1013 , MJE1291 , MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A .

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