MJE1290 Datasheet. Specs and Replacement

Type Designator: MJE1290  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO126

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MJE1290 datasheet

 9.1. Size:118K  inchange semiconductor

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MJE1290

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE12007 DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 B... See More ⇒

Detailed specifications: MJE1091, MJE1092, MJE1093, MJE1100, MJE1101, MJE1102, MJE1103, MJE12007, A1013, MJE1291, MJE13002, MJE13003, MJE13004, MJE13005, MJE13006, MJE13007, MJE13007A

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