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MJE13004 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13004
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 65 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220

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MJE13004 Datasheet (PDF)

 ..1. Size:72K  central
mje13004 mje13005.pdf

MJE13004
MJE13004

DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

 ..2. Size:273K  cdil
mje13004 05.pdf

MJE13004
MJE13004

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS MJE13004MJE13005TO-220Plastic PackageSwitchmode Series NPN Silicon Power TransistorsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNITCollector Emitter Sustaining Voltage VCEO (sus) 300 400 VCollector Emitter Voltage VCEV 600 700 VVEBOEmi

 ..3. Size:120K  inchange semiconductor
mje13004.pdf

MJE13004
MJE13004

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

 0.1. Size:366K  kec
mje13004d.pdf

MJE13004
MJE13004

SEMICONDUCTOR MJE13004DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABDHIGH VOLTAGE AND HIGH SPEED CSWITCHING APPLICATION. EFFEATURESGBuilt-in Free Wheeling DiodeHSuitable for Electrouic Ballast ApplicationDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5MAXIMUM RATING (Ta=25)_+F 11.0 0.3G 2

 0.2. Size:156K  foshan
mje13004p3.pdf

MJE13004
MJE13004

MJE13004P3(3DD13004P3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CB

 0.3. Size:158K  foshan
mje13004p1.pdf

MJE13004
MJE13004

MJE13004P1(3DD13004P1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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