All Transistors. MJE13004 Datasheet

 

MJE13004 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE13004

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 65 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

MJE13004 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE13004 Datasheet (PDF)

0.1. mje13004 mje13005.pdf Size:72K _central

MJE13004
MJE13004

DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

0.2. mje13004 05.pdf Size:273K _cdil

MJE13004
MJE13004

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS MJE13004MJE13005TO-220Plastic PackageSwitchmode Series NPN Silicon Power TransistorsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNITCollector Emitter Sustaining Voltage VCEO (sus) 300 400 VCollector Emitter Voltage VCEV 600 700 VVEBOEmi

 0.3. mje13004d.pdf Size:366K _kec

MJE13004
MJE13004

SEMICONDUCTOR MJE13004DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABDHIGH VOLTAGE AND HIGH SPEED CSWITCHING APPLICATION. EFFEATURESGBuilt-in Free Wheeling DiodeHSuitable for Electrouic Ballast ApplicationDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5MAXIMUM RATING (Ta=25)_+F 11.0 0.3G 2

0.4. mje13004p1.pdf Size:158K _foshan

MJE13004
MJE13004

MJE13004P1(3DD13004P1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.5. mje13004p3.pdf Size:156K _foshan

MJE13004
MJE13004

MJE13004P3(3DD13004P3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CB

0.6. mje13004.pdf Size:120K _inchange_semiconductor

MJE13004
MJE13004

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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