MJE13004. Аналоги и основные параметры
Наименование производителя: MJE13004
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 65 pf
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO220
Аналоги (замена) для MJE13004
- подборⓘ биполярного транзистора по параметрам
MJE13004 даташит
mje13004 mje13005.pdf
DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage
mje13004 05.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V VEBO Emi
mje13004.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;
mje13004d.pdf
SEMICONDUCTOR MJE13004D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B D HIGH VOLTAGE AND HIGH SPEED C SWITCHING APPLICATION. E F FEATURES G Built-in Free Wheeling Diode H Suitable for Electrouic Ballast Application DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 MAXIMUM RATING (Ta=25 ) _ + F 11.0 0.3 G 2
Другие транзисторы: MJE1101, MJE1102, MJE1103, MJE12007, MJE1290, MJE1291, MJE13002, MJE13003, D880, MJE13005, MJE13006, MJE13007, MJE13007A, MJE13008, MJE13009, MJE13070, MJE13071
History: BCW79-10 | LDTD113ZET1G
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