Справочник транзисторов. MJE13004

 

Биполярный транзистор MJE13004 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE13004
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 65 pf
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO220

 Аналоги (замена) для MJE13004

 

 

MJE13004 Datasheet (PDF)

 ..1. Size:72K  central
mje13004 mje13005.pdf

MJE13004
MJE13004

DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

 ..2. Size:273K  cdil
mje13004 05.pdf

MJE13004
MJE13004

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS MJE13004MJE13005TO-220Plastic PackageSwitchmode Series NPN Silicon Power TransistorsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNITCollector Emitter Sustaining Voltage VCEO (sus) 300 400 VCollector Emitter Voltage VCEV 600 700 VVEBOEmi

 ..3. Size:120K  inchange semiconductor
mje13004.pdf

MJE13004
MJE13004

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

 0.1. Size:366K  kec
mje13004d.pdf

MJE13004
MJE13004

SEMICONDUCTOR MJE13004DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABDHIGH VOLTAGE AND HIGH SPEED CSWITCHING APPLICATION. EFFEATURESGBuilt-in Free Wheeling DiodeHSuitable for Electrouic Ballast ApplicationDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5MAXIMUM RATING (Ta=25)_+F 11.0 0.3G 2

 0.2. Size:156K  foshan
mje13004p3.pdf

MJE13004
MJE13004

MJE13004P3(3DD13004P3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CB

 0.3. Size:158K  foshan
mje13004p1.pdf

MJE13004
MJE13004

MJE13004P1(3DD13004P1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

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