MJE232 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE232 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO126
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MJE232 datasheet
mje2360t.pdf
Order this document MOTOROLA by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS . . . useful for general purpose, high voltage applications requiring high fT. NPN SILICON Collector Emitter Sustaining Voltage 350 VOLTS VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc 30 WATTS DC Current Gain
mje2360t.pdf
isc Silicon NPN Power Transistor MJE2360T DESCRIPTION Collector Emitter Sustaining Voltage- V = 350 V(Min) CEO(SUS) DC Current Gain- h = 25(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 100mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier
Otros transistores... MJE220, MJE221, MJE222, MJE223, MJE224, MJE225, MJE230, MJE231, A1941, MJE233, MJE234, MJE235, MJE2360, MJE2360T, MJE2361, MJE2361T, MJE2370
Parámetros del transistor bipolar y su interrelación.
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