MJE232
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE232
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO126
MJE232
Transistor Equivalent Substitute - Cross-Reference Search
MJE232
Datasheet (PDF)
9.1. Size:98K motorola
mje2360t.pdf 
Order this documentMOTOROLAby MJE2360T/DSEMICONDUCTOR TECHNICAL DATAMJE2360TMJE2361TNPN Silicon High-VoltageTransistor0.5 AMPEREPOWER TRANSISTORS. . . useful for generalpurpose, high voltage applications requiring high fT.NPN SILICON CollectorEmitter Sustaining Voltage 350 VOLTSVCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc30 WATTS DC Current Gain
9.2. Size:215K inchange semiconductor
mje2360t.pdf
isc Silicon NPN Power Transistor MJE2360TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 350 V(Min)CEO(SUS)DC Current Gain-: h = 25(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 100mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low power audio amplifier
Datasheet: 2SA1803O
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