MJE240 Datasheet. Equivalente

 ..1. Size:213K  inchange semiconductor
 mje240.pdf

isc Silicon NPN Power Transistor MJE240 DESCRIPTION Collector Emitter Sustaining Voltage- V = 80 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJE250 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

 9.1. Size:235K  motorola
 mje243re.pdf

Order this document MOTOROLA by MJE243/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE243 Plastic Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching * MJE253 applications. High Collector Emitter Sustaining Voltage *Motorola Preferred Device VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC

 9.2. Size:187K  onsemi
 mje243 mje253.pdf

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

 9.3. Size:183K  onsemi
 mje243g.pdf

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

 9.4. Size:157K  onsemi
 mje243g mje253g.pdf

 9.5. Size:203K  cdil
 mje243 mje253.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter

 9.6. Size:214K  inchange semiconductor
 mje243.pdf

isc Silicon NPN Power Transistor MJE243 DESCRIPTION Collector Emitter Sustaining Voltage- V = 100 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJE253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe