MJE240 Datasheet and Replacement

isc Silicon NPN Power Transistor MJE240DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

Order this documentMOTOROLAby MJE243/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE243Plastic TransistorsPNP. . . designed for low power audio amplifier and lowcurrent, highspeed switching*MJE253applications. High CollectorEmitter Sustaining Voltage *Motorola Preferred DeviceVCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC

MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =

MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =

MJE243G (NPN),MJE253G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining VoltagePOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON Low Collector-Emitter Saturation Voltage

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE243TO-126 Plastic PackageECBComplementary MJE253Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL Value UNITCollector Base Voltage VCBO 100 VCollector Emitter

isc Silicon NPN Power Transistor MJE243DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 100 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne