MJE240 datasheet, аналоги, основные параметры

Наименование производителя: MJE240

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 40 MHz

Ёмкость коллекторного перехода (Cc): 50 pf

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: TO126

 Аналоги (замена) для MJE240

- подборⓘ биполярного транзистора по параметрам

 

MJE240 даташит

 ..1. Size:213K  inchange semiconductor
 mje240.pdf pdf_icon

MJE240

isc Silicon NPN Power Transistor MJE240 DESCRIPTION Collector Emitter Sustaining Voltage- V = 80 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJE250 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

 9.1. Size:235K  motorola
 mje243re.pdf pdf_icon

MJE240

Order this document MOTOROLA by MJE243/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE243 Plastic Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching * MJE253 applications. High Collector Emitter Sustaining Voltage *Motorola Preferred Device VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC

 9.2. Size:187K  onsemi
 mje243 mje253.pdf pdf_icon

MJE240

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

 9.3. Size:183K  onsemi
 mje243g.pdf pdf_icon

MJE240

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE234, MJE235, MJE2360, MJE2360T, MJE2361, MJE2361T, MJE2370, MJE2371, S8550, MJE241, MJE242, MJE243, MJE244, MJE2480, MJE2481, MJE2482, MJE2483