MJE243 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE243
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar MJE243
MJE243 Datasheet (PDF)
mje243 mje253.pdf
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
mje243 mje253.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE243TO-126 Plastic PackageECBComplementary MJE253Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL Value UNITCollector Base Voltage VCBO 100 VCollector Emitter
mje243.pdf
isc Silicon NPN Power Transistor MJE243DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 100 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne
mje243re.pdf
Order this documentMOTOROLAby MJE243/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE243Plastic TransistorsPNP. . . designed for low power audio amplifier and lowcurrent, highspeed switching*MJE253applications. High CollectorEmitter Sustaining Voltage *Motorola Preferred DeviceVCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC
mje243g.pdf
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
mje243g mje253g.pdf
MJE243G (NPN),MJE253G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining VoltagePOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON Low Collector-Emitter Saturation Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
