MJE243 datasheet, аналоги, основные параметры

Наименование производителя: MJE243  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 40 MHz

Ёмкость коллекторного перехода (Cc): 50 pf

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: TO126

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MJE243 даташит

 ..1. Size:187K  onsemi
 mje243 mje253.pdf pdf_icon

MJE243

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

 ..2. Size:203K  cdil
 mje243 mje253.pdf pdf_icon

MJE243

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter

 ..3. Size:214K  inchange semiconductor
 mje243.pdf pdf_icon

MJE243

isc Silicon NPN Power Transistor MJE243 DESCRIPTION Collector Emitter Sustaining Voltage- V = 100 V(Min) CEO(SUS) DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJE253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe

 0.1. Size:235K  motorola
 mje243re.pdf pdf_icon

MJE243

Order this document MOTOROLA by MJE243/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE243 Plastic Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching * MJE253 applications. High Collector Emitter Sustaining Voltage *Motorola Preferred Device VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE2360T, MJE2361, MJE2361T, MJE2370, MJE2371, MJE240, MJE241, MJE242, 2SC1815, MJE244, MJE2480, MJE2481, MJE2482, MJE2483, MJE2490, MJE2491, MJE250