MJE344 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE344 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO126
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MJE344 datasheet
mje3440.pdf
MJE3440 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO 350 V Collector-Base Voltag
mje344g.pdf
MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* 0.5 AMPERE POWER TRANSISTORS MAXIMUM RATINGS NPN SILICON Rating Symbol Value Unit 150-200 VOLTS, 20 WATTS Collector-Emitter Volt
Otros transistores... MJE33B, MJE33C, MJE34, MJE340, MJE340K, MJE341, MJE341K, MJE3439, 2N5551, MJE3440, MJE344K, MJE345, MJE34A, MJE34B, MJE34C, MJE350, MJE3520
Parámetros del transistor bipolar y su interrelación.
History: FC9577 | MJE5190
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