MJE344 Specs and Replacement
Type Designator: MJE344
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO126
MJE344 Substitution
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MJE344 datasheet
MJE3440 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO 350 V Collector-Base Voltag... See More ⇒
MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* 0.5 AMPERE POWER TRANSISTORS MAXIMUM RATINGS NPN SILICON Rating Symbol Value Unit 150-200 VOLTS, 20 WATTS Collector-Emitter Volt... See More ⇒
Detailed specifications: MJE33B, MJE33C, MJE34, MJE340, MJE340K, MJE341, MJE341K, MJE3439, 2N5551, MJE3440, MJE344K, MJE345, MJE34A, MJE34B, MJE34C, MJE350, MJE3520
Keywords - MJE344 pdf specs
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