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MJE53 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE53
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2.5 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220
 

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MJE53 PDF detailed specifications

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MJE53

isc Silicon NPN Power Transistor MJE53T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU... See More ⇒

Otros transistores... MJE5195 , MJE51T , MJE52 , MJE520 , MJE520K , MJE521 , MJE521K , MJE52T , 2SD669A , MJE53T , MJE5420Z , MJE5655 , MJE5656 , MJE5657 , MJE5730 , MJE5731 , MJE5731A .

History: D33D4

 

 
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