MJE53 Datasheet. Specs and Replacement

Type Designator: MJE53  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

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MJE53 datasheet

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MJE53

isc Silicon NPN Power Transistor MJE53T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU... See More ⇒

Detailed specifications: MJE5195, MJE51T, MJE52, MJE520, MJE520K, MJE521, MJE521K, MJE52T, 2SD669A, MJE53T, MJE5420Z, MJE5655, MJE5656, MJE5657, MJE5730, MJE5731, MJE5731A

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