MJE53T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE53T

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2.5 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

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MJE53T datasheet

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MJE53T

isc Silicon NPN Power Transistor MJE53T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU

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