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MJE53T PDF Specs and Replacement


   Type Designator: MJE53T
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 2.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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MJE53T PDF detailed specifications

 ..1. Size:209K  inchange semiconductor
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MJE53T

isc Silicon NPN Power Transistor MJE53T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU... See More ⇒

Detailed specifications: MJE51T , MJE52 , MJE520 , MJE520K , MJE521 , MJE521K , MJE52T , MJE53 , TIP2955 , MJE5420Z , MJE5655 , MJE5656 , MJE5657 , MJE5730 , MJE5731 , MJE5731A , MJE5732 .

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