All Transistors. MJE53T Datasheet

 

MJE53T Datasheet and Replacement


   Type Designator: MJE53T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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MJE53T Datasheet (PDF)

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MJE53T

isc Silicon NPN Power Transistor MJE53TDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLU

Datasheet: MJE51T , MJE52 , MJE520 , MJE520K , MJE521 , MJE521K , MJE52T , MJE53 , 2SD669 , MJE5420Z , MJE5655 , MJE5656 , MJE5657 , MJE5730 , MJE5731 , MJE5731A , MJE5732 .

History: 2SC3849 | BC393

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