MJE5742 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5742 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 200
Encapsulados: TO220
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MJE5742 datasheet
mje5742g.pdf
MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high-voltage power switching in inductive circuits. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* POWER DARLINGTON Applications TRANSISTORS Small Engine Ignition 8 AMPERES Switching Regulators 300-400 VOLTS Inv
mje5730g.pdf
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T
Otros transistores... MJE5656, MJE5657, MJE5730, MJE5731, MJE5731A, MJE5732, MJE5740, MJE5741, MPSA42, MJE5850, MJE5851, MJE5852, MJE5974, MJE5975, MJE5976, MJE5977, MJE5978
Parámetros del transistor bipolar y su interrelación.
History: KT3179A-9
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