MJE5742
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5742
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 800
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar MJE5742
MJE5742
Datasheet (PDF)
0.1. Size:129K onsemi
mje5742g.pdf
MJE5740G, MJE5742GNPN Silicon PowerDarlington TransistorsThe MJE5740G and MJE5742G Darlington transistors are designedfor high-voltage power switching in inductive circuits.Features http://onsemi.com These Devices are Pb-Free and are RoHS Compliant*POWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES Switching Regulators300-400 VOLTS Inv
8.1. Size:216K motorola
mje5740r.pdf
Order this documentMOTOROLAby MJE5740/DSEMICONDUCTOR TECHNICAL DATAMJE5740*MJE5741NPN Silicon PowerMJE5742*Darlington Transistors*Motorola Preferred DeviceThe MJE5740, 41, 42 Darlington transistors are designed for highvoltage powerswitching in inductive circuits. They are particularly suited for operation in applicationsPOWER DARLINGTONsuch as:TRANSISTORS
9.1. Size:190K motorola
mje5730r.pdf
Order this documentMOTOROLAby MJE5730/DSEMICONDUCTOR TECHNICAL DATAMJE5730MJE5731High Voltage PNP Silicon PowerMJE5731ATransistors. . . designed for line operated audio output amplifier, SWITCHMODE power supplydrivers and other switching applications.1.0 AMPEREPOWER TRANSISTORS 300 V to 400 V (Min) VCEO(sus)PNP SILICON 1.0 A Rated Collector Current300
9.2. Size:162K onsemi
mje5730g.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
9.3. Size:238K onsemi
mje5730 mje5731 mje5731a.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,switch-mode power supply drivers and other switching applications. www.onsemi.comFeatures1.0 AMPERE Popular TO-220 Plastic PackagePOWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 SeriesPCP SILICON These Devices ar
9.4. Size:162K onsemi
mje5731g.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
9.5. Size:162K onsemi
mje5731ag.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
9.6. Size:218K inchange semiconductor
mje5731.pdf
isc Silicon PNP Power Transistor MJE5731DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw
9.7. Size:218K inchange semiconductor
mje5731a.pdf
isc Silicon PNP Power Transistor MJE5731ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -400V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other s
9.8. Size:218K inchange semiconductor
mje5730.pdf
isc Silicon PNP Power Transistor MJE5730DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -300V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw
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