MJE5852 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5852
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 450 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 270 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MJE5852
MJE5852 PDF detailed specifications
mje5852.pdf
MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL INVERTERS 3 2 1 DESCRIPTION The MJE5852 is manufactured using High TO-220 Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in hi... See More ⇒
mje5850 mje5851 mje5852.pdf
MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits www.onsemi.com where fall time is critical. They are particularly suited for line operated switch-mode applications. 8 AMPERE Features PCP SILICON Switching Regulators POWER T... See More ⇒
mje5852g.pdf
MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http //onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits 8 AMPERE where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. PCP SILICON POWER TRANSISTORS Features 300-350-400 ... See More ⇒
mje5850r.pdf
Order this document MOTOROLA by MJE5850/D SEMICONDUCTOR TECHNICAL DATA MJE5850 * MJE5851 Designer's Data Sheet MJE5852 * SWITCHMODE Series *Motorola Preferred Device PNP Silicon Power Transistors 8 AMPERE The MJE5850, MJE5851 and the MJE5852 transistors are designed for high volt- PNP SILICON age, high speed, power switching in inductive circuits where fall time is critic... See More ⇒
Otros transistores... MJE5731 , MJE5731A , MJE5732 , MJE5740 , MJE5741 , MJE5742 , MJE5850 , MJE5851 , S9018 , MJE5974 , MJE5975 , MJE5976 , MJE5977 , MJE5978 , MJE5979 , MJE5980 , MJE5981 .
History: MMBTSC945O | MJE5982
History: MMBTSC945O | MJE5982
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