MJE5852 - Аналоги. Основные параметры
Наименование производителя: MJE5852
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 270 pf
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO220
Аналоги (замена) для MJE5852
MJE5852 - технические параметры
mje5852.pdf
MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL INVERTERS 3 2 1 DESCRIPTION The MJE5852 is manufactured using High TO-220 Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in hi
mje5850 mje5851 mje5852.pdf
MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits www.onsemi.com where fall time is critical. They are particularly suited for line operated switch-mode applications. 8 AMPERE Features PCP SILICON Switching Regulators POWER T
mje5852g.pdf
MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http //onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits 8 AMPERE where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. PCP SILICON POWER TRANSISTORS Features 300-350-400
mje5850r.pdf
Order this document MOTOROLA by MJE5850/D SEMICONDUCTOR TECHNICAL DATA MJE5850 * MJE5851 Designer's Data Sheet MJE5852 * SWITCHMODE Series *Motorola Preferred Device PNP Silicon Power Transistors 8 AMPERE The MJE5850, MJE5851 and the MJE5852 transistors are designed for high volt- PNP SILICON age, high speed, power switching in inductive circuits where fall time is critic
Другие транзисторы... MJE5731 , MJE5731A , MJE5732 , MJE5740 , MJE5741 , MJE5742 , MJE5850 , MJE5851 , S9018 , MJE5974 , MJE5975 , MJE5976 , MJE5977 , MJE5978 , MJE5979 , MJE5980 , MJE5981 .
History: MJE5976
History: MJE5976
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