MJE803T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE803T  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

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MJE803T datasheet

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 mje803t.pdf pdf_icon

MJE803T

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MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

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isc Silicon NPN Darlington Power Transistor MJE803 DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2A FE C = 100(Min) @ I = 4A C Complement to Type MJE703 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed swit

MOSTRAR MÁS

Otros transistores... MJE722, MJE800, MJE800T, MJE801, MJE801T, MJE802, MJE802T, MJE803, TIP31C, MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, MJF10012, MJF122, MJF127