MJE803T Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE803T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
MJE803T Transistor Equivalent Substitute - Cross-Reference Search
MJE803T Datasheet (PDF)
mje803t.pdf
isc Silicon NPN Darlington Power Transistor MJE803TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw
mje802 mje803.pdf
MJE802MJE803SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJE802 and MJE803 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration and are mounted inJedec SOT-32 plastic package.They are intendedfor use in medium power linear and switchingapplications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE M
mje803g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
mje803.pdf
isc Silicon NPN Darlington Power Transistor MJE803DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit
mje800 mje801 mje802 mje803.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for generalpurpose amplifier and lowspeed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
