MJE8503 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE8503

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 14 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 7.5

Encapsulados: TO220

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MJE8503 datasheet

 ..1. Size:211K  inchange semiconductor
 mje8503.pdf pdf_icon

MJE8503

isc Silicon NPN Power Transistor MJE8503 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 0.1. Size:89K  motorola
 mje8503a.pdf pdf_icon

MJE8503

Order this document MOTOROLA by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA * MJE8503A Advance Information *Motorola Preferred Device SWITCHMODE Series NPN Bipolar Power Transistor POWER TRANSISTORS The MJE8503A transistor is designed for high voltage, high speed, power switching 5.0 AMPERES in inductive circuits where fall time is critical. They are suited for line operated 1500 V

 8.1. Size:211K  inchange semiconductor
 mje8501.pdf pdf_icon

MJE8503

isc Silicon NPN Power Transistor MJE8501 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 8.2. Size:211K  inchange semiconductor
 mje8502.pdf pdf_icon

MJE8503

isc Silicon NPN Power Transistor MJE8502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

MOSTRAR MÁS

Otros transistores... MJE801T, MJE802, MJE802T, MJE803, MJE803T, MJE8500, MJE8501, MJE8502, 2SD1047, MJE9780, MJF10012, MJF122, MJF127, MJF13007, MJF15030, MJF15031, MJF16002