MJE8503 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE8503
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 14 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
Package: TO220
MJE8503 Transistor Equivalent Substitute - Cross-Reference Search
MJE8503 Datasheet (PDF)
mje8503.pdf
isc Silicon NPN Power Transistor MJE8503DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mje8503a.pdf
Order this documentMOTOROLAby MJE8503A/DSEMICONDUCTOR TECHNICAL DATA*MJE8503AAdvance Information*Motorola Preferred DeviceSWITCHMODE SeriesNPN Bipolar Power TransistorPOWER TRANSISTORSThe MJE8503A transistor is designed for high voltage, high speed, power switching5.0 AMPERESin inductive circuits where fall time is critical. They are suited for line operated1500 V
mje8501.pdf
isc Silicon NPN Power Transistor MJE8501DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mje8502.pdf
isc Silicon NPN Power Transistor MJE8502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mje8500.pdf
isc Silicon NPN Power Transistor MJE8500DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
