isc Silicon NPN Power Transistor MJE8503DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

Order this documentMOTOROLAby MJE8503A/DSEMICONDUCTOR TECHNICAL DATA*MJE8503AAdvance Information*Motorola Preferred DeviceSWITCHMODE SeriesNPN Bipolar Power TransistorPOWER TRANSISTORSThe MJE8503A transistor is designed for high voltage, high speed, power switching5.0 AMPERESin inductive circuits where fall time is critical. They are suited for line operated1500 V

isc Silicon NPN Power Transistor MJE8501DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

isc Silicon NPN Power Transistor MJE8502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

isc Silicon NPN Power Transistor MJE8500DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line