MJF15031 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby MJF15030/DSEMICONDUCTOR TECHNICAL DATANPNMJF15030Complementary PowerPNPMJF15031TransistorsFor Isolated Package ApplicationsDesigned for generalpurpose amplifier and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER TRANSISTO

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

isc Silicon PNP Power Transistor MJF15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swit

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

isc Silicon NPN Power Transistor MJF15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS) High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swi