Биполярный транзистор MJF15031
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJF15031
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 36
W
Макcимально допустимое напряжение коллектор-база (Ucb): 150
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 30
MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO220F
Аналоги (замена) для MJF15031
MJF15031
Datasheet (PDF)
..1. Size:246K motorola
mjf15030 mjf15031.pdf Order this documentMOTOROLAby MJF15030/DSEMICONDUCTOR TECHNICAL DATANPNMJF15030Complementary PowerPNPMJF15031TransistorsFor Isolated Package ApplicationsDesigned for generalpurpose amplifier and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER TRANSISTO
..2. Size:128K onsemi
mjf15030 mjf15031.pdf MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
..3. Size:209K inchange semiconductor
mjf15031.pdf isc Silicon PNP Power Transistor MJF15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swit
0.1. Size:134K onsemi
mjf15031g.pdf MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
7.1. Size:134K onsemi
mjf15030g.pdf MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE
7.2. Size:208K inchange semiconductor
mjf15030.pdf isc Silicon NPN Power Transistor MJF15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS) High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swi
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