MJF15031. Аналоги и основные параметры

Наименование производителя: MJF15031

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 30 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: TO220F

 Аналоги (замена) для MJF15031

- подборⓘ биполярного транзистора по параметрам

 

MJF15031 даташит

 ..1. Size:246K  motorola
 mjf15030 mjf15031.pdf pdf_icon

MJF15031

Order this document MOTOROLA by MJF15030/D SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 Complementary Power PNP MJF15031 Transistors For Isolated Package Applications Designed for general purpose amplifier and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON or chassis. POWER TRANSISTO

 ..2. Size:128K  onsemi
 mjf15030 mjf15031.pdf pdf_icon

MJF15031

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general-purpose amplifier and switching applications, http //onsemi.com where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER TRANSISTORS Electrically Similar to the Popular MJE

 ..3. Size:209K  inchange semiconductor
 mjf15031.pdf pdf_icon

MJF15031

isc Silicon PNP Power Transistor MJF15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJF15030 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and swit

 0.1. Size:134K  onsemi
 mjf15031g.pdf pdf_icon

MJF15031

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general-purpose amplifier and switching applications, http //onsemi.com where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER TRANSISTORS Electrically Similar to the Popular MJE

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE8502, MJE8503, MJE9780, MJF10012, MJF122, MJF127, MJF13007, MJF15030, MJE340, MJF16002, MJF16006A, MJF16010A, MJF16204, MJF16206, MJF16210, MJF16212, MJF18002