All Transistors. MJF15031 Datasheet

 

MJF15031 Datasheet and Replacement


   Type Designator: MJF15031
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220F
 

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MJF15031 Datasheet (PDF)

 ..1. Size:246K  motorola
 mjf15030 mjf15031.pdf pdf_icon

MJF15031

Order this documentMOTOROLAby MJF15030/DSEMICONDUCTOR TECHNICAL DATANPNMJF15030Complementary PowerPNPMJF15031TransistorsFor Isolated Package ApplicationsDesigned for generalpurpose amplifier and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER TRANSISTO

 ..2. Size:128K  onsemi
 mjf15030 mjf15031.pdf pdf_icon

MJF15031

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

 ..3. Size:209K  inchange semiconductor
 mjf15031.pdf pdf_icon

MJF15031

isc Silicon PNP Power Transistor MJF15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swit

 0.1. Size:134K  onsemi
 mjf15031g.pdf pdf_icon

MJF15031

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

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History: KSH30C | KSD569 | CS4013 | PDTC144WK | 2SC1860 | RN2103 | MJE5192

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