MJW16010A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJW16010A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 135 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO247
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MJW16010A Datasheet (PDF)
mjw16010a.pdf
isc Silicon NPN Power Transistor MJW16010ADESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critic
mjw16010.pdf
Order this documentMOTOROLAby MJW16010A/DSEMICONDUCTOR TECHNICAL DATAMJW16010A*Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1 kV SWITCHMODE Series15 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in125 AND 175 WATTSinductive circuits where fall time is critical. The
mjw16010.pdf
isc Silicon NPN Power Transistor MJW16010DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critica
mjw16018.pdf
isc Silicon NPN Power Transistor MJW16018DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: T1850 | MJE5740 | AM1011-500 | 2N2957 | AFT2222A
History: T1850 | MJE5740 | AM1011-500 | 2N2957 | AFT2222A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050