All Transistors. MJW16010A Datasheet

 

MJW16010A Datasheet and Replacement


   Type Designator: MJW16010A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 135 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO247
 

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MJW16010A Datasheet (PDF)

 ..1. Size:219K  inchange semiconductor
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MJW16010A

isc Silicon NPN Power Transistor MJW16010ADESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critic

 6.1. Size:362K  motorola
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MJW16010A

Order this documentMOTOROLAby MJW16010A/DSEMICONDUCTOR TECHNICAL DATAMJW16010A*Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1 kV SWITCHMODE Series15 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in125 AND 175 WATTSinductive circuits where fall time is critical. The

 6.2. Size:220K  inchange semiconductor
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MJW16010A

isc Silicon NPN Power Transistor MJW16010DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critica

 7.1. Size:220K  inchange semiconductor
mjw16018.pdf pdf_icon

MJW16010A

isc Silicon NPN Power Transistor MJW16018DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

Datasheet: MJH16106 , MJH6282 , MJH6283 , MJH6284 , MJH6285 , MJH6286 , MJH6287 , MJW16010 , 2SC828 , MJW16012 , MJW16018 , MJW16110 , MJW16206 , MJW16210 , MJW16212 , MM1008 , MM1139 .

History: 2SB242A | 2SD1827 | RN1131MFV

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