Справочник транзисторов. MJW16010A

 

Биполярный транзистор MJW16010A Даташит. Аналоги


   Наименование производителя: MJW16010A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 135 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 400 pf
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO247
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MJW16010A Datasheet (PDF)

 ..1. Size:219K  inchange semiconductor
mjw16010a.pdfpdf_icon

MJW16010A

isc Silicon NPN Power Transistor MJW16010ADESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critic

 6.1. Size:362K  motorola
mjw16010.pdfpdf_icon

MJW16010A

Order this documentMOTOROLAby MJW16010A/DSEMICONDUCTOR TECHNICAL DATAMJW16010A*Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1 kV SWITCHMODE Series15 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in125 AND 175 WATTSinductive circuits where fall time is critical. The

 6.2. Size:220K  inchange semiconductor
mjw16010.pdfpdf_icon

MJW16010A

isc Silicon NPN Power Transistor MJW16010DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critica

 7.1. Size:220K  inchange semiconductor
mjw16018.pdfpdf_icon

MJW16010A

isc Silicon NPN Power Transistor MJW16018DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC807K-16 | 2SA922-2 | 2SC2923 | 3CG953 | 2N1683 | PZTA28

 

 
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