MMBR571LT1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBR571LT1
Código: 7X
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.333
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 10
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.08
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8000
MHz
Capacitancia de salida (Cc): 0.4
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar MMBR571LT1
MMBR571LT1
Datasheet (PDF)
..1. Size:358K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5179LT1/DThe RF LineNPN SiliconMMBR5179LT1High-Frequency TransistorDesigned for smallsignal amplification at frequencies to 500 MHz.Specifically packaged for use in thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 15 dB Typ @ f = 200 MHz Low Noise NF = 4.5 dB Typ @
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT
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mmbr5031.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.