MMBR571LT1 Datasheet and Replacement
Type Designator: MMBR571LT1
SMD Transistor Code: 7X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.333 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
MMBR571LT1 Substitution
MMBR571LT1 Datasheet (PDF)
mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5179LT1/DThe RF LineNPN SiliconMMBR5179LT1High-Frequency TransistorDesigned for smallsignal amplification at frequencies to 500 MHz.Specifically packaged for use in thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 15 dB Typ @ f = 200 MHz Low Noise NF = 4.5 dB Typ @
mmbr521lt1 mrf5211lt1.pdf

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Datasheet: MMBR4957LT1 , MMBR4957LT3 , MMBR5031 , MMBR5031LT1 , MMBR5179 , MMBR5179LT1 , MMBR521LT1 , MMBR536 , 2N3906 , MMBR901 , MMBR901LT1 , MMBR901LT3 , MMBR911LT1 , MMBR920 , MMBR920LT1 , MMBR920LT3 , MMBR931 .
History: BFV18 | BCM857DS | UNR5115 | 2SC892 | UN1110R | SU178 | BU724AS
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History: BFV18 | BCM857DS | UNR5115 | 2SC892 | UN1110R | SU178 | BU724AS



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