MMBR571LT1 Datasheet and Replacement
Type Designator: MMBR571LT1
SMD Transistor Code: 7X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.333 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
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MMBR571LT1 Datasheet (PDF)
mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5179LT1/DThe RF LineNPN SiliconMMBR5179LT1High-Frequency TransistorDesigned for smallsignal amplification at frequencies to 500 MHz.Specifically packaged for use in thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 15 dB Typ @ f = 200 MHz Low Noise NF = 4.5 dB Typ @
mmbr521lt1 mrf5211lt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: KT208I | BDY12B | ED1602D | GSDR15025I | 2SD1007HR | DRC9143X | SFE245
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History: KT208I | BDY12B | ED1602D | GSDR15025I | 2SD1007HR | DRC9143X | SFE245



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