MMBT100A Todos los transistores

 

MMBT100A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT100A
   Código: NA1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT23
 

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MMBT100A datasheet

 ..1. Size:146K  fairchild semi
pn100 pn100a mmbt100 mmbt100a.pdf pdf_icon

MMBT100A

October 2008 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 SOT-23 B 1 1. Emitter 2. Base 3. Collector Mark PN100/PN100A Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector

 ..2. Size:260K  onsemi
pn100 pn100a mmbt100 mmbt100a.pdf pdf_icon

MMBT100A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:185K  fairchild semi
mmbt100.pdf pdf_icon

MMBT100A

PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark N1/N1A Mark PN100/PN100A Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Paramet

 8.1. Size:112K  motorola
mmbt1010 msd1010t1.pdf pdf_icon

MMBT100A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT1010LT1/D MMBT1010LT1 Low Saturation Voltage MSD1010T1 Motorola Preferred Devices PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy PNP GENERAL in general purpose driver applicatio

Otros transistores... MMBR941 , MMBR941BLT1 , MMBR941BLT3 , MMBR941LT1 , MMBR941LT3 , MMBR951ALT1 , MMBR951LT1 , MMBT100 , S8550 , MMBT1613 , MMBT1613A , MMBT1613R , MMBT1711 , MMBT1893 , MMBT1893R , MMBT200 , MMBT200A .

 

 

 


 
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