MMBT100A Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT100A
SMD Transistor Code: NA1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT23
MMBT100A Transistor Equivalent Substitute - Cross-Reference Search
MMBT100A Datasheet (PDF)
pn100 pn100a mmbt100 mmbt100a.pdf
October 2008PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.CETO-92SOT-23B11. Emitter 2. Base 3. CollectorMark: PN100/PN100AAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCEO Collector
pn100 pn100a mmbt100 mmbt100a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt100.pdf
PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.2SOT-23TO-92 111. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark: N1/N1AMark: PN100/PN100AAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Paramet
mmbt1010 msd1010t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT1010LT1/DMMBT1010LT1Low Saturation Voltage MSD1010T1Motorola Preferred DevicesPNP Silicon Driver TransistorsPart of the GreenLine Portfolio of devices with energyconserving traits.This PNP Silicon Epitaxial Planar Transistor is designed to conserve energyPNP GENERALin general purpose driver applicatio
mmbt1015-h.pdf
MCCMMBT1015-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMBT1015-H Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current
mmbt1015-l.pdf
MCCMMBT1015-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMBT1015-H Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current
mmbt1015.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT1015G-x-AC3-R SOT-113 E B C Tape ReelMMBT1015G-x-AE3-R
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
