MMBT1711 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT1711 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 70 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO236
Búsqueda de reemplazo de MMBT1711
- Selecciónⓘ de transistores por parámetros
MMBT1711 datasheet
9.1. Size:112K motorola
mmbt1010 msd1010t1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT1010LT1/D MMBT1010LT1 Low Saturation Voltage MSD1010T1 Motorola Preferred Devices PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy PNP GENERAL in general purpose driver applicatio
9.2. Size:185K fairchild semi
mmbt100.pdf
PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark N1/N1A Mark PN100/PN100A Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Paramet
9.3. Size:146K fairchild semi
pn100 pn100a mmbt100 mmbt100a.pdf
October 2008 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 SOT-23 B 1 1. Emitter 2. Base 3. Collector Mark PN100/PN100A Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector
9.4. Size:108K diodes
mmbt123s.pdf
MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching C Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B C "Green" Device (Notes 2 and 4) B 1.20 1.40 TOP VIEW B E D C 2.30 2.50 E
9.5. Size:869K mcc
mmbt1616a.pdf
MMBT1616A Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +150
9.6. Size:206K mcc
mmbt1015-h.pdf
MCC MMBT1015-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMBT1015-H Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage BVCEO=-50V Collector current
9.7. Size:206K mcc
mmbt1015-l.pdf
MCC MMBT1015-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMBT1015-H Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP EPITAXIAL Collector-Emitter Voltage BVCEO=-50V Collector current
9.8. Size:243K mcc
mmbt1815-h-l.pdf
MMBT1815-L MCC Micro Commercial Components TM MMBT1815-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 NPN EPITAXIAL Features Lead Free Finish/RoHS Compliant ("P" Suffix designates SILICON TRANSISTOR RoHS Compliant. See ordering information) Collector-Emitter voltage BVCEO=50V Collector current up t
9.9. Size:260K onsemi
pn100 pn100a mmbt100 mmbt100a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.10. Size:231K utc
mmbt1116a.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION Complement to UTC MMBT1616/A 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT1116G-x-AE3-R SOT-23 E B C Tape Reel MMBT1116AG-x-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Ba
9.11. Size:199K utc
mmbt1015.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT1015G-x-AC3-R SOT-113 E B C Tape Reel MMBT1015G-x-AE3-R
9.12. Size:230K utc
mmbt1815.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BVCEO=50V * Collector Current up to 150mA * High hFE Linearity * Complement to MMBT1015 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT1815G-x-AC3-R SOT-113 E B C Tape Reel MMBT1815G-x-AE3-R S
9.13. Size:231K utc
mmbt1116.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION Complement to UTC MMBT1616/A 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT1116G-x-AE3-R SOT-23 E B C Tape Reel MMBT1116AG-x-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Ba
9.14. Size:228K utc
mmbt1616 mmbt1616a.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT1616L-x-AE3-R MMBT1616G-x-AE3-R SOT-23 B E C Tape Reel MM
9.15. Size:2206K jiangsu
mmbt1616a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors J C T MMBT1616A TRANSISTOR (NPN) SOT 23 FEATURES Audio frequency power amplifier Medium speed switching MARKING 16A 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage 120 V VCEO Coll
9.16. Size:121K jiangsu
mmbt1616.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT1616 TRANSISTOR (NPN) SOT 23 FEATURES Audio frequency power amplifier Medium speed switching MARKING 16 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage 60 V VCEO Collector-Emit
Otros transistores... MMBR941LT3, MMBR951ALT1, MMBR951LT1, MMBT100, MMBT100A, MMBT1613, MMBT1613A, MMBT1613R, BD335, MMBT1893, MMBT1893R, MMBT200, MMBT200A, MMBT2218, MMBT2218A, MMBT2219, MMBT2219A
