MMBT1711 Datasheet. Specs and Replacement

Type Designator: MMBT1711  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO236

 MMBT1711 Substitution

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MMBT1711 datasheet

 9.1. Size:112K  motorola

mmbt1010 msd1010t1.pdf pdf_icon

MMBT1711

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT1010LT1/D MMBT1010LT1 Low Saturation Voltage MSD1010T1 Motorola Preferred Devices PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy PNP GENERAL in general purpose driver applicatio... See More ⇒

 9.2. Size:185K  fairchild semi

mmbt100.pdf pdf_icon

MMBT1711

PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark N1/N1A Mark PN100/PN100A Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Paramet... See More ⇒

 9.3. Size:146K  fairchild semi

pn100 pn100a mmbt100 mmbt100a.pdf pdf_icon

MMBT1711

October 2008 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 SOT-23 B 1 1. Emitter 2. Base 3. Collector Mark PN100/PN100A Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector... See More ⇒

 9.4. Size:108K  diodes

mmbt123s.pdf pdf_icon

MMBT1711

MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching C Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B C "Green" Device (Notes 2 and 4) B 1.20 1.40 TOP VIEW B E D C 2.30 2.50 E ... See More ⇒

Detailed specifications: MMBR941LT3, MMBR951ALT1, MMBR951LT1, MMBT100, MMBT100A, MMBT1613, MMBT1613A, MMBT1613R, BD335, MMBT1893, MMBT1893R, MMBT200, MMBT200A, MMBT2218, MMBT2218A, MMBT2219, MMBT2219A

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