All Transistors. MMBT1711 Datasheet

 

MMBT1711 Datasheet and Replacement


   Type Designator: MMBT1711
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO236
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MMBT1711 Datasheet (PDF)

 9.1. Size:112K  motorola
mmbt1010 msd1010t1.pdf pdf_icon

MMBT1711

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT1010LT1/DMMBT1010LT1Low Saturation Voltage MSD1010T1Motorola Preferred DevicesPNP Silicon Driver TransistorsPart of the GreenLine Portfolio of devices with energyconserving traits.This PNP Silicon Epitaxial Planar Transistor is designed to conserve energyPNP GENERALin general purpose driver applicatio

 9.2. Size:185K  fairchild semi
mmbt100.pdf pdf_icon

MMBT1711

PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.2SOT-23TO-92 111. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark: N1/N1AMark: PN100/PN100AAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Paramet

 9.3. Size:146K  fairchild semi
pn100 pn100a mmbt100 mmbt100a.pdf pdf_icon

MMBT1711

October 2008PN100/PN100A/MMBT100/MMBT100ANPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.CETO-92SOT-23B11. Emitter 2. Base 3. CollectorMark: PN100/PN100AAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCEO Collector

 9.4. Size:108K  diodes
mmbt123s.pdf pdf_icon

MMBT1711

MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching CDim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B C"Green" Device (Notes 2 and 4) B 1.20 1.40 TOP VIEWB ED C 2.30 2.50 E

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NJD2873T4G | FZT560 | AFY29 | ET5065 | CH867UPNGP | ESM162 | CD9016G

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