MMBT5550 Todos los transistores

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter

August 2005 MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 140 V VCBO Collector-Base Voltage 160 V VEBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR (NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V

MMBT5550 TRANSISTOR(NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C PC Collector Power Dissipation 225 mW

SMD Type Transistors NPN Transistors MMBT5550 (KMBT5550) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=140V 1 2 High Voltage Transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 140V 160V@I =1mA) CEO C This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmental standards of

MMBT5550L, MMBT5551L High Voltage Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector

MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 2 MMBT5550 140 EMITTER MMBT5551 160 Collector-Base Voltage VCBO Vdc MARKING MMBT5550 160 3 DIAGRAM MMBT5551 18

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 MAXIMUM RATINGS EMITTER Rating Symbol Va

Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH 1 1 BASE MMBT5551GH 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 140 Vdc Collector Base Voltage V CBO 160 Vdc Emitter B

MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER MMBT5550 MMBT5551 V CEO 140 160 160 180 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) MMBT5550 140 1.0 , MMBT5551 160 MMBT5550 160 -100 , 180 MMBT5551 6.0 10 , WEITRON http //www.weitron.com.tw MMBT5550 MMBT5551 ELECTRICAL