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MMBT5550 Specs and Replacement


   Type Designator: MMBT5550
   SMD Transistor Code: 1F_M1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
 

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MMBT5550 detailed specifications

 ..1. Size:199K  motorola
mmbt5550 mmbt5551.pdf pdf_icon

MMBT5550

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter... See More ⇒

 ..2. Size:105K  fairchild semi
mmbt5550.pdf pdf_icon

MMBT5550

August 2005 MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 140 V VCBO Collector-Base Voltage 160 V VEBO... See More ⇒

 ..3. Size:714K  jiangsu
mmbt5550.pdf pdf_icon

MMBT5550

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR (NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V ... See More ⇒

 ..4. Size:469K  htsemi
mmbt5550.pdf pdf_icon

MMBT5550

MMBT5550 TRANSISTOR(NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C PC Collector Power Dissipation 225 mW ... See More ⇒

Detailed specifications: MMBT5179 , MMBT5400 , MMBT5400R , MMBT5401 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MPSA42 , MMBT5550LT1 , MMBT5550R , MMBT5551 , 2SB1386GP , MMBT5551LT1 , MMBT5551R , MMBT5771 , MMBT5816 .

History: 2N1544 | MMBT5857 | 2SC5079

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History: 2N1544 | MMBT5857 | 2SC5079

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