MMBT6517 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT6517
Código: 1Z
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT6517
MMBT6517 Datasheet (PDF)
mmbt6517.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6517LT1/DHigh Voltage TransistorMMBT6517LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 350 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VE
mmbt6517.pdf
SMD Type TransistorsNPN TransistorsMMBT6517 (KMBT6517)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.131.BaseCOLLECTOR2.Emitter3.collector1BASE2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
mmbt6517.pdf
TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO350
mmbt6517lt1g.pdf
MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC
nsvmmbt6517lt1g.pdf
MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC
mmbt6517lt1.pdf
MMBT6517LT1GHigh Voltage TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit 2EMITTERCollector - Emitter Voltage VCEO 350 VCollector -Base Voltage VCBO 350 V3Emitter - Base Voltage VEBO 5.0 VBase Current IB 25 mA1Collector Current - C
mmbt6517lt3g.pdf
MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC
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